parameters symbol device number rat ing units repetitive peak off-state voltage and repetitive peak reverse voltage * v drm * v rrm fcr0840 FCR0860 400 600 volt rms on-state current at ta=57 and conduction angle of 180o i t (rms) 0.8 amp peak surge (non-repetitive)on-state current, ? cycle ,at 50hz or 60hz i tsm 8 amp peak gate-trigger current for 3 sec , max i gtm 0.8 amp peak gate-power dissipation at igt Qigtm p gm 0.1 w att average gate-power dissipation p g (av) 0.01 w att peak gate reverse voltage v rgm 10 v peak off-state current, ta=25 (1) vdrm & vrrm=max. rating ta=125 (2) * i drm * i rrm (1) 10 (2) 100 a max maximum on-state voltage. (peak) at tc=25 and it =rated amps v tm 1.7 volt max dc holding current * i h 5 ma max critical rate-of-rise of off-state voltage gate open,ta=110 * critical dv/dt 5 v/ sec dc gate ? trigger current for anode voltage=7vdc, rl=100 i gt 100 a max dc gate ? trigger voltage for anode voltage=7vdc, rl=100 v gt 0.8 volt max gate-controlled turn-on tim e td+tr igt=10ma tgt 2.2 sec thermal resistance , junction-to-case r j-c 75 /watt typ storage temperature range tstg -40 to + 150 operating temperature ra nge , tj toper -40 to + 110 driven directly with ic a nd mos device. feature proprietary, void-free glass passivate chips. available in voltage ratings from 400 to 600 volts. (vdrm and vrrm) maximum ratings and electrical characteristics (ta=25 ) sensitive gate trigger current. designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors. rgk=1k 1 2 3 to-92 1. cathode 2. gate 3. anode description mechanical dimensions fcr0840~60
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